Energy transfer and 1.54 m emission in amorphous silicon nitride films
نویسندگان
چکیده
S. Yerci, R. Li, S. O. Kucheyev, T. van Buuren, S. N. Basu, and L. Dal Negro Department of Electrical and Computer Engineering, Boston University, 8 Saint Mary’s Street, Boston, Massachusetts 02215–2421, USA Lawrence Livermore National Laboratory, Livermore, California 94551, USA Division of Materials Science and Engineering, Boston University, 15 Saint Mary’s Street, Brookline, Massachusetts 02446, USA Department of Mechanical Engineering, Boston University, 110 Cummington Street, Boston, Massachusetts 02215, USA
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Temperature dependence of the energy transfer from amorphous silicon nitride to Er ions
The 1.54 m photoluminescence and decay time of Er-doped amorphous silicon nitride films with different Si concentrations are studied in the temperature range of 4 to 320 K. The temperature quenching of the Er emission lifetime demonstrates the presence of nonradiative trap centers due to excess Si in the films. The temperature dependence and the dynamics of the energy coupling between amorphous...
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